The high porous Silicon Carbide DiSiC-HP is based on a reaction forming process of Silicon and Carbon in-situ to SiC. The final porous structure is build up by hexagonal plate like crystals which build a three dimensional network with a high pore volume.
The two standard products we produce today are the DiSiC-HP58 at a porosity level of 58% and a mean pore diameter of 16 – 18µm and DiSiC-HP65 at a porosity level of 65% and a mean pore diameter of 18 – 20µm. The specific features are listed in the table below
The filters are available from 4.66’’ in diameter up to 15’’ whereas the segments size depends on the application.